Samsung Submits New HBM Patent for 12+ Layer Memory on June 30, Improves Reliability

According to BlockBeats citing Citrini researcher Jukan, Samsung Electronics filed a new HBM patent on June 30 to enhance reliability in high-stacked (12+ layer) memory. The patent improves the top-layer dummy die structure by introducing a three-tier stepped design with curved surfaces, employing deep-slot cutting technology to reduce warping, cracking, and delamination while optimizing thermal management and bonding interface cleanliness. The innovation targets HBM5 and 16+ layer products, potentially boosting yield rates and long-term stability.
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