Samsung HBM4E Yield Exceeds 70%, D1d DRAM Process Targets November Production Approval

According to Samsung Electronics' DS division CTO Song Jae-hyuk, HBM4E reliability testing yield has exceeded 70% as of June 30, with development entering a stable phase. The company, which began mass production of HBM4 in February, is advancing its next-generation D1d DRAM process technology with a target of securing production readiness approval in November. D1d will be applied to Samsung's HBM5 and subsequent products.
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