Samsung Electronics announced on the 27th that it will apply a 2-nanometer foundry process with Gate-All-Around (GAA) structure to the base die of HBM5, the next-generation High Bandwidth Memory. The company stated through its semiconductor newsroom that HBM5's operating speed is expected to be more than 50% faster than the previous generation HBM4E, and that it is preparing cutting-edge processes to enhance speed and power efficiency. The base die is a logic semiconductor located at the bottom of the HBM stack structure, connecting data between external processors such as GPUs and CPUs and the HBM, and has emerged as a core component determining overall product performance and power efficiency since HBM4 began using foundry processes.
Samsung Shipped HBM4 and HBM4E with 4nm Process
Samsung Electronics shipped the world's first HBM4 for mass production in February, followed by HBM4E 12-layer samples in May. The base dies of HBM4 and HBM4E utilize Samsung Foundry's 4-nanometer 4th-generation process, which has entered its third year of mass production.
Samsung Applied High-Density and Ultra-High-Performance Devices to HBM4E Base Die
Gu Ja-heum, Vice President and Head of Technology Development at Samsung Electronics Foundry Business, explained that high-density devices and ultra-high-performance devices were applied to the HBM4E base die to achieve high-speed operation of 14Gbps or higher. Metal wiring layers were efficiently arranged to reduce power consumption, and heat dissipation paths were also optimized.
Samsung Highlights Turnkey Capability Integrating Memory, Foundry, and Packaging
Samsung Electronics emphasized its turnkey capability that internalizes memory, foundry, and advanced packaging. The structure involves the Memory Business producing core dies, the Foundry Business producing base dies, and the packaging organization assembling them into finished products. According to the company, this enables joint optimization of speed, power, heat, and yield from the design stage. Samsung stated that during HBM4 base die development, a cross-divisional task force was formed, achieving performance and yield targets from the first sample, with approximately three months required from process preparation to result confirmation.
Samsung Started 2nm Production and Plans 2nm 2nd-Gen Mobile Product Launch
Samsung Electronics is expanding the application areas of foundry advanced processes from mobile to AI, high-performance computing (HPC), automotive, and robotics. The company started mass production of its 2-nanometer 1st-generation process in the second half of last year. In the second half of this year, it plans to begin mass production of mobile products based on the 2-nanometer 2nd-generation process with improved yield and performance. Additionally, Samsung is expanding one-stop solutions linking advanced packaging and HBM, and pursuing technology development based on silicon photonics and co-packaged optics (CPO) for data centers. Based on the 4-nanometer base die experience accumulated with HBM4, Samsung plans to preemptively apply the 2-nanometer process to HBM5 to strengthen its technology leadership in the AI semiconductor market.
FAQ
What foundry process will Samsung apply to HBM5 base die?
Samsung Electronics announced on the 27th that it will apply a 2-nanometer foundry process with Gate-All-Around (GAA) structure to the base die of HBM5. The company stated that HBM5's operating speed is expected to be more than 50% faster than HBM4E.
When did Samsung ship HBM4 and HBM4E products?
Samsung Electronics shipped the world's first HBM4 for mass production in February and shipped HBM4E 12-layer samples in May. The base dies of both products use Samsung Foundry's 4-nanometer 4th-generation process.
What is Samsung's production timeline for 2nm process?
Samsung Electronics started mass production of its 2-nanometer 1st-generation process in the second half of last year. The company plans to begin mass production of mobile products based on the 2-nanometer 2nd-generation process with improved yield and performance in the second half of this year.
